* Very fast switching
* Trench MOSFET technology
* Low threshold voltage
* Ultra thin package profile with 0.37 mm height
* ESD protection up to 2 kV
.
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
1.4 Quick reference .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO
T8
1.2 Features and benefits
* Very fast switching
* Tr.
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